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1

Morphology of the InAlAsInP interface in the MBE-grown heterostructures analysed by SIMS depth profiling

P. Konarski, M.A. Herman, A.V. Kozhukhov, V.I. Obodnikov

Journal:

Thin Solid Films

Year:

1995

Language:

english

File:

PDF, 889 KB

english, 1995

2

SIMS study on redistribution of implanted impurities in InSb and InAs during post-implantation annealing

N.N. Gerasimenko, G.S. Khryashchev, G.L. Kuryshev, A.M. Myasnikov, V.I. Obodnikov

Journal:

Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Year:

1996

Language:

english

File:

PDF, 367 KB

english, 1996

3

Endobronchial chemo-immunotherapy (ECIT) of non-operable lung cancer (LC): 10-year clinical experience

Obodnikov, O, Bagirov, M, Sokolov, V, Getman, V

Journal:

Year:

2000

Language:

english

File:

PDF, 118 KB

english, 2000

4

Consecutive stages of redistribution of oxygen implanted in silicon heavily doped with boron

V.I. Obodnikov, E.G. Tishkovsky, A.G. Cherkov, L.I. Fedina

Journal:

Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Year:

2006

Language:

english

File:

PDF, 1.18 MB

english, 2006

5

Hundred MeV heavy ion irradiation effect on boron diffusion in Si

V.A. Skuratov, N. Dinu, I.V. Antonova, V.I. Obodnikov

Journal:

Year:

2001

Language:

english

File:

PDF, 153 KB

english, 2001

6

Formation of the thermal donors in the hydrogen-implanted nitrogen-doped silicon crystal

I.V. Antonova, D. Yang, V.P. Popov, V.I. Obodnikov, A. Misiuk

Journal:

Microelectronic Engineering

Year:

2003

Language:

english

File:

PDF, 118 KB

english, 2003

7

Splitting and electrical properties of the SOI structure formed from the heavily boron doped silicon with using of the smart-cut technology

I.V. Antonova, V.P. Popov, V.F. Stas, A.K. Gutakovskii, A.E. Plotnikov, V.I. Obodnikov

Journal:

Microelectronic Engineering

Year:

1999

Language:

english

File:

PDF, 356 KB

english, 1999

8

Donor center formation in hydrogen implanted silicon

E.P Neustroev, I.V Antonova, V.F Stas, V.P Popov, V.I Obodnikov

Journal:

Physica B: Condensed Matter

Year:

1999

Language:

english

File:

PDF, 158 KB

english, 1999

9

Mapping the redistributed components of the AuGe/GaAs system after scanning laser Annealing

I. Mojzes, R. Veresegyházy, V. Obodnikov, Yu. Vaulin, S. Vasilev

Journal:

physica status solidi (a)

Year:

1983

Language:

english

File:

PDF, 298 KB

english, 1983

10

Equipment for neutralizing drain water from chemical polishing

B. N. Obodnikov

Journal:

Glass and Ceramics

Year:

1967

Language:

english

File:

PDF, 107 KB

english, 1967

11

Creative researches of rationalizers

B. N. Obodnikov

Journal:

Glass and Ceramics

Year:

1974

Language:

english

File:

PDF, 437 KB

english, 1974

12

Combating atmospheric pollution by lead aerosol in the production of cut glass

B. N. Obodnikov

Journal:

Glass and Ceramics

Year:

1967

Language:

english

File:

PDF, 74 KB

english, 1967

13

Removing iron from cut glass residues by chemical washing

B. N. Obodnikov

Journal:

Glass and Ceramics

Year:

1967

Language:

english

File:

PDF, 40 KB

english, 1967

14

Improving the life of glass furnaces between repairs

B. N. Obodnikov

Journal:

Glass and Ceramics

Year:

1966

Language:

english

File:

PDF, 228 KB

english, 1966

15

Formation of a quasi-periodic boron distribution in silicon, initiated by ion implantation

A. M. Myasnikov, V. I. Obodnikov, V. G. Seryapin, E. G. Tishkovskii, B. I. Fomin, E. I. Cherepov

Journal:

Year:

1997

Language:

english

File:

PDF, 59 KB

english, 1997

16

Influence of the initial boron doping level on the boron atom distribution arising as a result of heat treatment in silicon implanted with boron ions

V. I. Obodnikov, E. G. Tishkovskii

Journal:

Year:

1998

Language:

english

File:

PDF, 69 KB

english, 1998

17

Special features of spatial redistribution of selenium atoms implanted in silicon

A. A. Taskin, B. A. Zaitsev, V. I. Obodnikov, E. G. Tishkovskii

Journal:

Year:

2000

Language:

english

File:

PDF, 107 KB

english, 2000

18

Redistribution of phosphorus implanted into silicon doped heavily with boron

E. G. Tishkovskii, V. I. Obodnikov, A. A. Taskin, K. V. Feklistov, V. G. Seryapin

Journal:

Year:

2000

Language:

english

File:

PDF, 64 KB

english, 2000

19

Electrical conductivity of silicon-on-insulator structures prepared by bonding silicon wafers to a substrate using hydrogen implantation

I. V. Antonova, V. F. Stas’, V. P. Popov, V. I. Obodnikov, A. K. Gutakovskii

Journal:

Year:

2000

Language:

english

File:

PDF, 186 KB

english, 2000

20

X-ray-emission study of the structure of Si:H layers formed by low-energy hydrogen-ion implantation

V. R. Galakhov, I. V. Antonova, S. N. Shamin, V. I. Aksenova, V. I. Obodnikov, A. K. Gutakovskii, V. P. Popov

Journal:

Year:

2002

Language:

english

File:

PDF, 136 KB

english, 2002

21

Effect of the residual gas on the lithium layer of a neutron-generating target

B. F. Bayanov, S. Yu. Taskaev, V. I. Obodnikov, E. G. Tishkovskii

Journal:

Instruments and Experimental Techniques

Year:

2008

Language:

english

File:

PDF, 206 KB

english, 2008

22

Diffusion of Nitrogen Atoms Implanted into Synthetic Diamonds

E. I. Cherepov, E. G. Tishkovskii, V. I. Obodnikov, Yu. N. Pal'yanov, A. G. Sokol

Journal:

Russian Microelectronics

Year:

2002

Language:

english

File:

PDF, 43 KB

english, 2002

23

Conversion of conduction in p-InAs by Ar+ ion implantation

N.N. Gerasimenko, A.M. Myasnikov, A.A. Nesterov, V.I. Obodnikov, L N Safronov, G.S. Khriaschev

Journal:

Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Year:

1989

Language:

english

File:

PDF, 223 KB

english, 1989

24

The electrical properties of planar n+−p junctions in InAs produced by S+ ion implantation

N.N. Gerasimenko, G.L. Kuryshev, A.M. Myasnikov, V.I. Obodnikov, L.N. Safronov, G.S. Khryashchev

Journal:

Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Year:

1991

Language:

english

File:

PDF, 347 KB

english, 1991

25

Redistribution of magnesium in InAs during post-implantation annealing

N.N. Gerasimenko, A.M. Myasnikov, V.I. Obodnikov, L.N. Safronov

Journal:

Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Year:

1993

Language:

english

File:

PDF, 181 KB

english, 1993

26

Redistribution of nitrogen implanted in the crystals of synthetic diamond

E.I. Cherepov, E.G. Tishkovsky, V.I. Obodnikov, Ju.N. Pal'yanov, A.G. Sokol, N.V. Sobolev

Journal:

Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Year:

2001

Language:

english

File:

PDF, 113 KB

english, 2001

27

Raman and photoluminescence investigations of the H+ ion implanted silicon-on-insulator structure formed by hydrogen ion cut

I.E Tyschenko, A.B Talochkin, B.A Kolesov, K.S Zhuravlev, V.I Obodnikov, V.P Popov

Journal:

Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Year:

2002

Language:

english

File:

PDF, 240 KB

english, 2002

28

Distribution of impurities implanted in InSb and InAs before and after annealing

N.N. Gerasimenko, G.L. Kuryshev, A.M. Myasnikov, V.I. Obodnikov, I.V. Verner

Journal:

Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Year:

1997

Language:

english

File:

PDF, 448 KB

english, 1997

29

Impact of high energy ion implantation on dopant distribution in silicon

E.P Neustroev, I.V Antonova, V.I Obodnikov, V.P Popov, V.A Skuratov, S.A Smagulova, A.Yu Didyk

Journal:

Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Year:

1998

Language:

english

File:

PDF, 142 KB

english, 1998

30

Strain in hydrogen and oxygen implanted silicon and SOI structures annealed at high pressure

J. Bak-Misiuk, I.V. Antonova, A. Misiuk, J. Domagala, V.P. Popov, V.I. Obodnikov, J. Härtwig, A. Romano-Rodriguez, A. Bachrouri

Journal:

Journal of Alloys and Compounds

Year:

2001

Language:

english

File:

PDF, 469 KB

english, 2001

31

P-546 Thiol-disulfide ratio (TDR) in blood as a predictive in vitro test for treatment effect evaluation and individual chemotherapy (CT) choice in patients with advanced non-small cell lung cancer (NSCLC)

Obodnikov, Oleksandr O., Parshikov, Oleksandr, Orlovskiy, Oleksiy

Journal:

Year:

2003

Language:

english

File:

PDF, 187 KB

english, 2003

32

P-543 Efficacy of individualized chemotherapy (CT) in patients withadvanced non-small cell lung cancer (NSCLC)

Obodnikov, O., Parshikov, O., Orlovskiy, O.

Journal:

Year:

2005

Language:

english

File:

PDF, 175 KB

english, 2005

33

[IEEE 2009 International Conference and Seminar on Micro/Nanotechnologies and Electron Devices (EDM) - Novosibirsk, Russia (2009.07.1-2009.07.6)] 2009 International Conference and Seminar on Micro/Nanotechnologies and Electron Devices - Silicon avalanche diodes for direct detection of nuclear particles

Chistokhin, I.B., Pchelyakov, O.P., Tishkovsky, E.G., Obodnikov, V.I., Maksimov, V.V., Ivanov, A.A., Pinzhenin, E.I., Gramsch, E.

Year:

2009

Language:

english

File:

PDF, 4.12 MB

english, 2009

34

The formation of defects in Si under the radiation enhanced diffusion conditions

Kalinin, V. V., Aseyev, A. L., Gerasimenko, N. N., Obodnikov, V. I., Stenin, S. I.

Journal:

Radiation Effects

Year:

1980

Language:

english

File:

PDF, 1.07 MB

english, 1980

35

Properties of Silicon Film in a Silicon-on-Glass Structure

Kilanov, D.V., Antonova, I.V., Safronov, L.N., Popov, V.P., Obodnikov, V.I., Spesivtsev, E.V.

Journal:

Solid State Phenomena

Year:

2002

File:

PDF, 333 KB

2002

36

Pressure-Assisted Lateral Nanostructuring of the Epitaxial Silicon Layers with SiGe Quantum Wells

Antonova, I.V., Gulyaev, M.B., Skuratov, V.A., Soots, R.A., Obodnikov, V.I., Misiuk, Andrzej, Zaumseil, P.

Journal:

Solid State Phenomena

Year:

2006

Language:

english

File:

PDF, 729 KB

english, 2006

37

Structural and Photoluminescence Properties of H+ Ion-Implanted Silicon-on-Insulator Structures Formed by Hydrogen Slicing

Tyschenko, I.E., Talochkin, A.B., Zhuravlev, K.S., Obodnikov, V.I., Popov, V.P.

Journal:

Solid State Phenomena

Year:

2002

File:

PDF, 342 KB

2002

38

A secondary ion mass spectrometry study of p + porous silicon

Karanovich, A A, Romanov, S I, Kirienko, V V, Myasnikov, A M, Obodnikov, V I

Journal:

Journal of Physics D Applied Physics

Year:

1995

Language:

english

File:

PDF, 360 KB

english, 1995

39

Capacitance study of selectively doped SiGe/Si heterostructures

Antonova, I V, Obodnikov, V I, Kagan, M S, Troeger, R T, Ray, S K, Kolodzey, J

Journal:

Semiconductor Science and Technology

Year:

2005

Language:

english

File:

PDF, 222 KB

english, 2005

40

Ftir Spectroscopy and Spectroscopic Ellipsometry Study of Nanocrystalline Layers Formed by High-Dose Hydrogen and Deuterium Implantation of Silicon

Safronov, L.N., Spesivtsev, E.V., Popov, V.P., Antonova, I.V., Gutakovskii, A.K., Obodnikov, V.I.

Journal:

MRS Proceedings

Year:

2000

Language:

english

File:

PDF, 1.46 MB

english, 2000

41

SPIE Proceedings [SPIE International Conference on Solid State Crystals 2000 - Zakopane, Poland (Monday 9 October 2000)] International Conference on Solid State Crystals 2000: Growth, Characterization, and Applications of Single Crystals - Effect of stress on defect transformation in hydrogen-implanted silicon and SOI structures

Antonova, Irina V., Popov, Vladimir P., Bak-Misiuk, Jadwiga, Domagala, J., Misiuk, Andrzej, Obodnikov, V. I., Gutakovskii, A. K., Romano-Rodriguez, A., Rogalski, Antoni, Adamiec, Krzysztof, Madejczyk,

Year:

2001

Language:

english

File:

PDF, 656 KB

english, 2001

42

SPIE Proceedings [SPIE SPIE Proceedings - (Sunday 12 February 2012)] - Silicon avalanche photodiodes for particle detection

Chistokhin, I. B., Pchelyakov, O. P., Tishkovsky, E. G., Obodnikov, V. I., Maksimov, V. V., Ivanov, A. A., Gramsch, E., Valiev, Kamil A., Orlikovsky, Alexander A.

Year:

2012

Language:

english

File:

PDF, 330 KB

english, 2012

43

PUB099 New Predictive in vitro Test for the Comparative Targeted Agent Choice in Patients with Advanced NSCLC

Obodnikov, Oleksandr, Parshykov, Oleksandr, Didenko, Genadiy

Journal:

Journal of Thoracic Oncology

Year:

2017

Language:

english

File:

PDF, 192 KB

english, 2017

44

Doping silicon with erbium by recoil implantation

K. V. Feklistov,D. S. Abramkin,V. I. Obodnikov,V. P. Popov

Journal:

Technical Physics Letters

Year:

2015

Language:

english

File:

PDF, 156 KB

english, 2015

45

Construction machines requirement for the building site

Sinenko, Sergei, Zhadanovsky, Boris, Obodnikov, Vyacheslav, Kalinina, O.

Journal:

E3S Web of Conferences

Year:

2019

Language:

english

File:

PDF, 1.79 MB

english, 2019

46

Experimental Methods of One-floor Steel Constructionsâ Seismic Stability â Analysis of Results

Olfati, Rahmanuddin, Alekseev, Sergei, Obodnikov, Vyacheslav

Journal:

IOP Conference Series Materials Science and Engineering

Year:

2019

File:

PDF, 445 KB

2019

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